- Circuiti per la microelettronica pdf file software#
- Circuiti per la microelettronica pdf file series#
Output admittance and feed-back admittance are almost wholly due to inductive effects in the short-wave region, as shown by several measurements described.
Causes for the latter deviations are given. Theoretical formulas for inductive effects are well checked and those for transit-time effects are not so well checked by measurements. Several measurements on transit-time effects are described, showing that the transit time between the input grid and the screen grid may not be neglected as compared with the transit time between the cathode and the input grid.
Circuiti per la microelettronica pdf file series#
By three series of measurements it is shown, that about one to two thirds of the input damping of modern European high-frequency valves of normal dimensions on short waves must be ascribed to inductive effects and not to transit times. A general theory of the effect of these quantities on input admittance, output admittance, feedback admittance, and mutual admittance is put forward for tetrodes, pentodes, hexodes, etc., used as high-frequency amplifiers. Contrary to the opinion, expressed in several recent publications, for many types of valves the main cause of this increase must not be sought in electron-transit-time effects, but in the action of capacitances, mutual inductances, and self-inductances of the tube electrodes and of their leads within and without the tubes.
Circuiti per la microelettronica pdf file software#
It then goes to the analysis and dimensioning of the final circuit: in this respect the personal contribution has been made to derive the analytical reports that allow to size the components of the circuit, as well as simulations to assess its reliability with software PSPICE and APLAC RF 8.0 Student Version.Į 'was strictly formed in the examiner's report that allows to find the W_opt of MOS devices (ie the width of gate optimized taking into account the noise figure and the power dissipated by the device) and has been shown the convenience of the cascode configuration to degeneration source of inductive: it succeeds then to simultaneously have a reduced noise figure, a reduced power dissipation and a relatively high voltage gain.īy recent measurements of input loss, output loss, and feed-back capacitance of modern high-frequency amplifier tubes (pentodes) up to 300 megacycles, a considerable increase of these values in the short-wave range has become manifest. The third chapter deals with a more detailed description of an LNA and parameters that characterize it, and illustrates the RF design methodologies. The second chapter is entirely devoted to the study of noise components of a MOS device, and the calculation of the overall noise figure of this device. The first chapter of the discussion was devoted to the study LNA in a transceiver system, and the study of the theory of noise in electronic circuits, also recalling the basic concepts on MOS device. The technological parameters to which reference is made for the dimensioning of the circuit are those relating to technology N5BO MOSIS 0.5 and the supply voltage is 1V. Reverse isolation (S12) of the order of-45dB Output return loss (S22) of the order of-15dB
Input return loss (S11) of the order of-8dB The specifications to which this circuit must satisfy are: The problem addressed in the examiner is the analysis and design of an LNA RF in CMOS technology, used in DECT, PCS and GPS applications.
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